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LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
LED ARRAY
Pb
Lead-Free Parts
LA62B-3/VYSBKS-10-PF
DATA SHEET
DOC. NO : REV. DATE :
QW0905- LA62B-3/VYSBKS-10-PF A
: 07 - Aug. - 2008
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LA 62B-3/VYSBKS-10-PF Page 1/5
Package Dimensions
7.0 3.2
2.10.5
6.35
3.0 7.37 5.08
2.90.5 2.54TYP 1 2 3 2.54TYP 5.40.5
0.5TYP
VY
SBKS
1.CATHODE YELLOW 2.COMMON ANODE 3.CATHODE BLUE
123
LVYSBKS2392/R1/H
3.0
5.0
0.5
TYP
18MIN
2.0MIN 2.0MIN 2.54TYP
1 2 3
SBKS
VY
1.CATHODE BLUE 2.COMMON ANODE 3.CATHODE YELLOW
2.54TYP
123
Note : 1.All dimension are in millimeter tolerance is 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LA 62B-3/VYSBKS-10-PF Page 2/5
Absolute Maximum Ratings at Ta=25
Ratings Parameter Symbol VY Forward Current Peak Forward Current Duty 1/10@10KHz Power Dissipation Reverse Current @5V Electrostatic Discharge Operating Temperature Storage Temperature Soldering Temperature IF IFP PD Ir ESD Topr Tstg Tsol 30 60 75 10 2000 -20 ~ +80 -30 ~ +100 Max 260 for 5 sec Max (2mm from body) SBKS 30 100 120 50 500 mA mA mW UNIT
A V
Typical Electrical & Optical Characteristics (Ta=25 )
Dominant Spectral wave halfwidth length nm Forward voltage @20mA(V) Min. Typ. Max.
Luminous Viewing intensity angle @20mA(mcd) 2 1/2
PART NO
MATERIAL
COLOR
Lens
Dnm
Emitted
GaAsP/GaP
(deg) Min. Typ.
Yellow
White Diffused
590 475
20 26
1.7 ----
---3.5
2.6 4.2
15 15
28 28
50 50
LA62B-3/VYSBKS-10-PF
InGaN/SiC
Blue
Note : 1.The forward voltage data did not including 0.1V testing tolerance. 2. The luminous intensity data did not including 15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LA62B-3/VYSBKS-10-PF Page 3/5
Typical Electro-Optical Characteristics Curve
VY CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
1000
3.0
Forward Current(mA)
100 10
Relative Intensity Normalize @20mA
1.5 2.0 2.5 3.0
2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000
1.0 0.1 1.0
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
1.2
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
3.0
Forward Voltage@20mA Normalize @25
Relative Intensity@20mA Normalize @25
1.1
2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
1.0
0.9
0.8 -40 -20 0 20 40 60 80 100
Ambient Temperature()
Ambient Temperature()
Fig.5 Relative Intensity vs. Wavelength
1.0
Relative Intensity@20mA
0.5
0.0 500 550 600 650
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LA62B-3/VYSBKS-10-PF Page 4/5
Typical Electro-Optical Characteristics Curve
SBK-S CHIP
Fig.1 Forward current vs. Forward Voltage
30 25 20 15 10 5 0 1 2 3 4 5
Fig.2 Relative Intensity vs. Forward Current
Forward Current(mA)
1.5
Relative Intensity Normalize @20mA
1.25 1.0 0.75 0.5 0.25 0 0 5 10 15 20 25 30
Forward Voltage(V)
Forward Current(mA)
Fig.3 Forward Current vs. Temperature
Fig.4 Relative Intensity vs. Wavelength
Forward Current@20mA
30 20 10 0 0 25 50 75 100
Relative Intensity@20mA
40
1.0
0.5
0 380
430
480
530
580
630
680
Ambient Temperature( )
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LA62B-3/VYSBKS-10-PF Page 5/5
Reliability Test:
Test Item
Test Condition
1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs)
Description
This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed.
Reference Standard
MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1
Operating Life Test
High Temperature Storage Test
1.Ta=1055 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours.
MIL-STD-883:1008 JIS C 7021: B-10
Low Temperature Storage Test
1.Ta=-405 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of low temperature for hours.
JIS C 7021: B-12
High Temperature High Humidity Test
1.Ta=655 2.RH=90%~95% 3.t=240hrs2hrs
The purpose of this test is the resistance of the device under tropical for hous.
MIL-STD-202:103B JIS C 7021: B-11
Thermal Shock Test
1.Ta=1055&-405 (10min) (10min) 2.total 10 cycles
The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire.
MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011
Solder Resistance Test
1.T.Sol=2605 2.Dwell time= 101sec.
MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2
Solderability Test
1.T.Sol=2305 2.Dwell time=51sec
This test intended to see soldering well performed or not.

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